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SAMSUNG[Samsung semiconductor]
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Part No. |
K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628JTM
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OCR Text |
16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
Revision History
Revision No. History
0.0 ...Word Mode Only) * Read While Program/Erase Operation * Multiple Bank Architecture - 16 Banks (16Mb P... |
Description |
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
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File Size |
1,565.84K /
98 Page |
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it Online |
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SHARP ELECTRONICS CORP
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Part No. |
LH28F160BJHE-TTL90
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OCR Text |
16m ( 1mb 16 / 2mb 8) (model no.: lhf16j04) spec no.: el152050 issue date: february 14, 2003 p roduc t s pecific a tions
lhf16j0...word/byte write command....................................... 13 4.8 block erase suspend command ..... |
Description |
1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
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File Size |
5,932.96K /
54 Page |
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it Online |
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SIEMENS AG
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Part No. |
HYS64V16220GCDL HYS64V4220GCDL HYS64V8220GCDL
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OCR Text |
...anization ? two bank 8m 64 and 16m 64 non-parity module organization ? suitable for use in pc100 and pc133 applications ? auto resingle ...word x 8 bit) v cc v ss c 1 - c 4 d0-d3 d0-d3 note: all resistors are 10 w ldqm we we dqmb1 dq8-dq1... |
Description |
3.3V SDRAM Modules(3.3V SDRAM 模块) 3.3V的内存模块(3.3V的内存模块)
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File Size |
136.94K /
18 Page |
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it Online |
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Atmel
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Part No. |
AT52BC6402A AT52BC6402AT
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OCR Text |
...rammed/Erased - Memory Plane A: 16M of Memory Including Eight 4K Word Sectors - Memory Plane B: 16M of Memory Consisting of 32K Word Sectors - Memory Plane C: 16M of Memory Consisting of 32K Word Sectors - Memory Plane D: 16M of Memory Cons... |
Description |
64 Mbit Multi-plane Flash combined with a 16M PSRAM
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File Size |
247.55K /
39 Page |
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it Online |
Download Datasheet |
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Price and Availability
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