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NXP Semiconductors N.V.
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| Part No. |
PSMN9R5-100XS
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| OCR Text |
... data psmn9r5-100xs n-channel 100v 9.6 m ? standard level mosfet in to220f (sot186a) rev. 2 ? 20 october 2011 preliminary data sheet to-...2a p tot total power dissipation t mb =25c; see figure 2 --52.6w static characteristics r dson drai... |
| Description |
N-channel 100v 9.6 m standard level MOSFET in TO220F (SOT186A)
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| File Size |
213.55K /
15 Page |
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it Online |
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Infineon
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| Part No. |
SGD02N120
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| OCR Text |
... withstand time 1) v ge = 15v, 100v v cc 1200v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 62 w operating junct...2a t j =25 c t j =150 c 2.5 - 3.1 3.7 3.6 4.3 gate-emitter threshold voltage v ge(th) i c =100 a,... |
| Description |
IGBTs & DuoPacks - 2a 1200V TO252aA SMD IGBT
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| File Size |
399.11K /
12 Page |
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it Online |
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Hi-Sincerity Mocroelect...
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Microelectronics
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| Part No. |
HLB123D HLB123
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| OCR Text |
...=0.5A, VCE=5V IC=1A, VCE=5V VCC=100v, IC=1A, IB1=IB2=0.2a VCC=100v, IC=1A, IB1=IB2=0.2a VCC=100v, IC=1A, IB1=IB2=0.2a
*Pulse Test : Pulse Width 380us, Duty Cycle2%
uS uS uS
Classification Of hFE1
Rank Range B1 10-17 B2 13-22 B3 18-2... |
| Description |
NPN EPITAXIAL PLANAR TRANSISTOR
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| File Size |
37.46K /
4 Page |
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SGS Thomson Microelectronics
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| Part No. |
AN527
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| OCR Text |
...a / div) i b (0.1a / div) v ce (100v / div)
5/10 application note normal operation open lamp v ce (100v / div) i c (1a / div) v ce (100v /...2a / div) b) ground i c (2a / div) v ce (200v / div) a)
7/10 application note figure 9. steady sta... |
| Description |
ELECTRONIC FLOURESCENT LAMP BALLAST
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| File Size |
66.34K /
10 Page |
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it Online |
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Price and Availability
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