0.396 pdf Datasheet P11 Full Text Search --- IC-ON-LINE


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0.396 Datasheet PDF File

For 0.396 Found Datasheets File :: 2436 Search Time::3.469ms
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				Advanced Semiconductor
Part No.	ASI10573
OCR Text	... MAXIMUM inches / mm .020 / 0.51 .100 / 2.54 .376 / 9.55 .110 / 2.79 .395 / 10.03 .193 / 4.90 .450 / 11.43 .125 / 3.18 .640 / 16.26 .890...396 / 10.06 .130 / 3.30 .407 / 10.34 MAXIMUM RATINGS IC VCC PDISS TJ TSTG JC O C D E F G H ...
Description	NPN SILICON RF POWER TRANSISTOR
File Size	16.72K / 1 Page	View it Online	Download Datasheet

				Advanced Semiconductor
Part No.	ASI10575
OCR Text	...690 / 17.53 .890 / 22.61 .003 / 0.08 .052 / 1.32 .118 / 3.00 .145 / 3.68 .120 / 3.05 MAXIMUM RATINGS IC VCC PDISS TJ TSTG JC O B...396 / 10.06 .130 / 3.30 .407 / 10.34 G H I J K L M N P .510 / 12.95 .710 / 18.03 .910 / 23....
Description	NPN SILICON RF POWER TRANSISTOR
File Size	16.84K / 1 Page	View it Online	Download Datasheet

				ASI[Advanced Semiconductor]
Part No.	ASI10576
OCR Text	...690 / 17.53 .890 / 22.61 .003 / 0.08 .052 / 1.32 .118 / 3.00 .145 / 3.68 .120 / 3.05 43 A 55 V 1670 W @ TC 100 OC -65 C to +250 C -65 OC to +200 OC 0.06 C/W O O D E F G H I J K L M N P .396 / 10.06 .130 / 3.30 .407 / 10.34 ...
Description	NPN SILICON RF POWER TRANSISTOR
File Size	16.89K / 1 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL
OCR Text	...VCC Tstg PD IOS Address Rating -0.5 to +4.6 -0.5 to +4.6 -55 to +150 1 50 CMOS DRAM Units V V C W mA * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the con...
Description	16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. 16M x 4bit CMOS Dynamic RAM with Extended Data Out
File Size	414.70K / 21 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL-6 K4E640812B-TC-45 K4E660812B-JC-6 K4E660812B-JC-45 K4E660812B-JC-5
OCR Text	...VCC Tstg PD IOS Address Rating -0.5 to +6.5 -0.5 to +4.6 -55 to +150 1 50 CMOS DRAM Units V V C W mA * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the con...
Description	8M x 8bit CMOS dynamic RAM with extended data out, 45ns 8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns
File Size	415.47K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5 K4E640812C-JC-45 K4E660812C-JCL-5
OCR Text	...VCC Tstg PD IOS Address Rating -0.5 to +4.6 -0.5 to +4.6 -55 to +150 1 50 CMOS DRAM Units V V C W mA * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the con...
Description	8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
File Size	415.01K / 21 Page	View it Online	Download Datasheet

				ROHM[Rohm] Rohm CO.,LTD. Rohm Co., Ltd.
Part No.	KF3002-GL50A
OCR Text	...epth 3) DOT #640 55.50.3 550.3 0.8960.2 DOT #640 250.5 Max.45 Max.36 2 0 (20.8) (3) 15.30.3 7.30.3 Max.10 #2 #20 #4 #1 Max.5.5 3H10 560.3 280.3 (Effective Depth 3) #1 #19 HIROSE HIF3FC-20PA-2.5...
Description	Thermal Printheads > For BARCODE, SCALE > KF2002-, 300-GL Series Thick Film Thermal Printhead (300DPI) 厚膜热喷头（300DPI
File Size	73.64K / 4 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	L3100B L3100B1 3025
OCR Text	... CNET 10/700 5/310 10/700 5/200 0.5/700 0.2/310 s s s s s s 1.5 38 2 50 1.5 38 kV A kV A kV A CONNECTION DIAGRAM Gate N NC Gate P Cathode...396 379 361 347 333 322 310 299 291 283 277 266 263 256 250 245 242 237 233 - + L3100B L...
Description	Overvoltage and Overcurrent Protection for Telecom Line(用于电信线路的过流和过压保护) From old datasheet system
File Size	60.07K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF210451 PTF210451E
OCR Text	....84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic Intermodulation Distortion Gain Drain Efficiency Symbol IMD Gps D Min ...396 0.196 x 0.696 0.407 x 0.534 0.778 x 0.033 0.078 x 0.072 0.166 x 0.048 0.101 x 0.226 0.222 x 0.07...
Description	LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 45 W 2110-2170 MHz
File Size	402.88K / 8 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF210901 PTF210901E
OCR Text	...z, 3GPP WCDMA signal, P/A R = 8.0 dB, 3.84 MHz BW -25 30 25 IM3 -35 20 -40 15 -45 Gain -50 -55 39 40 41 42 43 44 ACPR 10 5 Drain Efficiency...396 0.114 x 0.038 0.595 x 0.038 0.196 x 0.698 0.603 x 0.045 0.130 x 0.991 0.236 x 0.991 0.445 x 0.07...
Description	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
File Size	262.17K / 8 Page	View it Online	Download Datasheet

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