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    SEMICOA[Semicoa Semiconductor]
Part No. 2N5153L
OCR Text ...t o mW/ C o PT TJ TSTG 1.0 5.7 -65 to +200 -65 to +200 C C o Data Sheet No. 2N5153L Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 100 mA, IB...
Description Type 2N5153L Geometry 9702 Polarity PNP

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    SEME-LAB[Seme LAB]
Part No. 2N5153 2N5151
OCR Text 0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH SPEED MEDIUM VOLTAGE SWITCHES DESCRIPTION The 2N5151 and the 2N5153 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case intended for use in switching applications. The...
Description HIGH SPEED MEDIUM VOLTAGE SWITCHES

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    SEMICOA[Semicoa Semiconductor]
Part No. 2N5153
OCR Text ...t o mW/ C o PT TJ TSTG 1.0 5.7 -65 to +200 -65 to +200 C C o Data Sheet No. 2N5153 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 100 mA, IB ...
Description Type 2N5153 Geometry 9702 Polarity PNP

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    ON Semi
Part No. 2N5457 ON0060
OCR Text ...wn Voltage (IG = -10 Adc, VDS = 0) Gate Reverse Current (VGS = -15 Vdc, VDS = 0) (VGS = -15 Vdc, VDS = 0, TA = 100C) Gate - Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) Gate - Source Voltage (VDS = 15 Vdc, ID = 100 mAdc) V(BR)GSS IGSS...
Description CASE 29-4, STYLE TO-2 (TO-26AA)
From old datasheet system

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    2N6111 2N6107 5352

STMICROELECTRONICS[STMicroelectronics]
Part No. 2N6111 2N6107 5352
OCR Text ...7 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (R BE = 100 ) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c = 25 C Storage Temperature Max. Operating ...
Description From old datasheet system
SILICON PNP SWITCHING TRANSISTORS

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    2N6132 2N6101 2N6491 2N6486 2N6487 2N6489 2N6099 2N5294 2N5296 2N6121 2N6122 2N6123 2N6124 2N6126 2N6040 2N6111 2N6488 2

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ON Semiconductor
Central Semiconductor Corp.
Advanced Semiconductor
CENTRAL[Central Semiconductor Corp]
Central Semiconductor C...
Part No. 2N6132 2N6101 2N6491 2N6486 2N6487 2N6489 2N6099 2N5294 2N5296 2N6121 2N6122 2N6123 2N6124 2N6126 2N6040 2N6111 2N6488 2N6041 2N6042 2N6043 2N6044 2N6103 2N6107 2N6109 2N6490 2N6125 2N6129 2N6130 2N6131 2N6133 2N6134 2N6476 2N5298 2N5490 2N5492 2N5494 2N5496 2N6045 2N6288 2N6290 2N6292 2N6386 2N6387 2N6388 2N6473 2N6474 2N6475 2N6667 2N6668
OCR Text 0 4.0 4.0 7.0 7.0 7.0 7.0 2N6040 2N6041 2N6042 10 10 10 10 10 16 2N6124 2N6125 2N6126 2N6132 2N6133 2N6134 2N6111 2N6109 2N6107 2N6666 2N6667 2N6668 2N6475 2N6476 2N6489 2N6490 2N6491 4.0 4.0 4.0 7.0 7.0 7.0 7.0 7.0 7.0 8.0 10 10 4.0 4.0 15...
Description    NPN SILICON TRANSISTOR
NPN SILICON TRANSISTOR 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
(2N6130 - 2N6134) NPN SILICON TRANSISTOR
Leaded Power Transistor General Purpose
Leaded Power Transistor Darlington

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    2N930CSM

Central Semiconductor Corp
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
Part No. 2N930CSM
OCR Text ...ILITY APPLICATIONS FEATURES 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) * SILICON PLANAR EPITAXIAL NPN TRANSISTOR * HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) * CECC SCREENING OPTIONS A 1.40 (0.055) max. 2.54 0....
Description HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
HIGH SPEED MEDIUM POWER NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
HIGH SPEED/ MEDIUM POWER/ NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
Supercapacitor; Capacitance:0.68F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin

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    2SC1047

Panasonic Semiconductor
Part No. 2SC1047
OCR Text ...t V V V mA mW C C 2.540.15 123 0.45 -0.1 1.27 +0.2 13.50.5 5.10.2 0.45 -0.1 1.27 +0.2 2.30.2 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector to base voltage Emit...
Description Silicon NPN epitaxial planer type(For high-frequency amplification)

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    2SC1047

Wing Shing Computer Components
Part No. 2SC1047
OCR Text ... time Tmb 25 IC = 4.0A; IB = 0.4A IF = 4.0A IC=4.0A,IB1=-IB2=0.4A,VCC=60V 1.5 0.35 MAX 160 140 12 100 3 2.0 1.0 UNIT V V A A W V V s LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter...
Description Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

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    2SC1050

Wing Shing Computer Components
Part No. 2SC1050
OCR Text ... VBE = 0V TYP Tmb 25 IC = 0.5A; IB = 0.1A IF = 0.5A 1.5 MAX 300 250 1 40 1.2 2.0 - UNIT V V A A W V V s LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collec...
Description Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

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