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INFINEON[Infineon Technologies AG]
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Part No. |
Q67040-S4655 IKA03N120H2 Q67040-S4649
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OCR Text |
... C E = 0V ,V G E = 2 0V V C E = 20V, I C = 3A 2 20 80 100 nA S 2.1 1.55 1.6 3 3.9 A 2.2 2.5 2.4 2.8 1200 V Symbol Conditions Value min. Typ....4A
2A
Ic
0A 10Hz
100Hz
1kHz
10kHz
100kHz
1V
10V
100V
1000V
f, SW... |
Description |
IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT FullPak HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode High Speed CMOS Logic Hex Non-Inverting Buffers 16-TSSOP -55 to 125
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File Size |
332.84K /
14 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
FRM440D FRM440H FRM440R FN3235
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OCR Text |
... 1mA VDS = VGS, ID = 1mA VGS = +20V VGS = -20V VDS = 500V, VGS = 0 VDS = 400V, VGS = 0 VDS = 400V, VGS = 0, TC = +125oC Time = 20s VGS = 10V, ID = 6A VGS = 10V, ID = 4A VDD = 250V, ID = 6A Pulse Width = 3s Period = 300s, Rg = 25 0 VGS 10 ... |
Description |
6A, 500V, 1.40 Ohm, Rad Hard, N-Channel Power MOSFETs From old datasheet system 6A/ 500V/ 1.40 Ohm/ Rad Hard/ N-Channel Power MOSFETs
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File Size |
46.71K /
6 Page |
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it Online |
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Shenzhen Jin Yu Semiconductor Co., Ltd.
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Part No. |
PT8205
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OCR Text |
20v rds(on), vgs@2.5v, ids@3.4a rds(on), vgs@4.v, ids@4.3a features advanced trench process technology high density cell design for ultra low on-resistance high power and current handing capability ideal for li i... |
Description |
20 V Dual N-Channel Enhancement Mode MOSFET
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File Size |
2,425.55K /
3 Page |
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INFINEON[Infineon Technologies AG]
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Part No. |
SKP02N120 SKB02N120
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OCR Text |
...transfer characteristics (VCE = 20V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of jun...4A 6A 8A 10ns 0 50 100 150
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function ... |
Description |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
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File Size |
406.61K /
14 Page |
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it Online |
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Price and Availability
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