-160v pdf Datasheet P11 Full Text Search --- IC-ON-LINE

-160v Datasheet PDF File

For -160v Found Datasheets File :: 2246 Search Time::1.188ms
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				IRF[International Rectifier]
Part No.	HFB08PB120 HFA08PB120
OCR Text	... 20 IF = 8 A IF = 4 A V R= 160V T J = 125C T J = 25C 16 IF = 8 A IF = 4 A 100 80 60 Irr ( A) 12 8 4 40 20 100 di F /dt (A/s ) Fig. 5 - Typical Reverse Recovery Vs. dif /dt VR = 160V TJ = 125C TJ = 25C 1000 0 ...
Description	1200V 8A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package Ultrafast, Soft Recovery Diode Ultrafast/ Soft Recovery Diode
File Size	173.16K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	HFA16PA120C
OCR Text	... 20 IF = 8 A IF = 4 A V R= 160V T J = 125C T J = 25C 16 IF = 8 A IF = 4 A 80 60 Irr ( A) 100 12 8 4 40 20 100 di F /dt (A/s ) Fig. 5 - Typical Reverse Recovery Vs. dif /dt VR = 160V TJ = 125C TJ = 25C 1000 ...
Description	1200V 16A HEXFRED Common Cathode Diode in a TO-247AC package HEXFRED Ultrafast, Soft Recovery Diode HEXFRED Ultrafast/ Soft Recovery Diode
File Size	123.69K / 7 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	FXT601B
OCR Text	...C=10mA, IB=0* IE=100A, IC=0 VCB=160V VCB=160V,T amb =100C VEB=8V, IC=0 VCES=160V IC=0.5A, IB=5mA* IC=1A, IB=10mA* IC=1A, IB=10mA* IC=1A, VCE=5V* IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* IC=100mA, VCE=10V f=20MHz Emitter Cut-Of...
Description	NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR
File Size	28.46K / 1 Page	View it Online	Download Datasheet

				STMICROELECTRONICS
Part No.	STTH2002CRC
OCR Text	...00 1000 q rr (nc) i f =10a v r =160v t j =125 c t j =25 c di f /dt(a/s) figure 7. reverse recovery time versus di f /dt (typical values) figure 8. peak reverse recovery current versus di f /dt (typical values) figure 9. dynamic parameters...
Description	20 A, 200 V, SILICON, RECTIFIER DIODE
File Size	80.60K / 8 Page	View it Online	Download Datasheet

				STMICROELECTRONICS
Part No.	STTH2002CFP STTH2002CG-TR
OCR Text	...c) rr di /dt(a/s) f i =10a f v =160v r t =125c j t =25c j 0 10 20 30 40 50 60 70 80 10 100 1000 t (ns) rr t =25c j t =125c j di /dt(a/s) f i =10a f v =160v r figure 9. peak reverse recovery current versus di f /dt (typical values, per diod...
Description	10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB 15 A, 200 V, SILICON, RECTIFIER DIODE
File Size	109.59K / 11 Page	View it Online	Download Datasheet

				Advanced Power Electronics
Part No.	AP09N20H
OCR Text	...ge current (t j =150 o c) v ds =160v , v gs =0v - - 100 ua i gss gate-source leakage v gs =-- na q g total gate charge 3 i d =8.6a - 23 37 nc q gs gate-source charge v ds =160v - 4 - nc q gd gate-drain ("miller") charge v gs =10v - 13 - n...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	98.58K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electronics ...
Part No.	AP09N20BGS-HF AP09N20BGS-HF14 AP09N20BGS-HF-14
OCR Text	...in-source leakage current v ds =160v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =5a - 21 33.6 nc q gs gate-source charge v ds =160v - 2 - nc q gd gate-drain ("miller") charge...
Description	Simple Drive Requirement Lower Gate Charge
File Size	56.18K / 4 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FRM9230D FRM9230H FRM9230R FN3263
OCR Text	...20V VDS = -200V, VGS = 0 VDS = -160v, VGS = 0 VDS = -160v, VGS = 0, TC = +125oC Time = 20s VGS = -10V, ID = 4A VGS = -10V, ID = 2A VDD = -100V, ID = 4A Pulse Width = 3s Period = 300s, Rg = 25 0 VGS 10 (See Test Circuit) MIN -200 -2.0 1 14...
Description	4A/ -200V/ 1.30 Ohm/ Rad Hard/ P-Channel Power MOSFETs 4A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs From old datasheet system
File Size	56.76K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHM8250 IRHM7250 JANSR2N7269 IRHM3250 IRHM4250 JANSF2N7269 JANSG2N7269
OCR Text	....0mA VDS > 15V, IDS = 16A VDS= 160V,VGS=0V VDS = 160V VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 12V, ID = 26A VDS = 100V VDD = 100V, ID = 26A, RG = 2.35 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage ...
Description	200V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 200V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
File Size	266.93K / 12 Page	View it Online	Download Datasheet

				Advanced Power Electronics
Part No.	AP09N20BGS-HF
OCR Text	...in-source leakage current v ds =160v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =5a - 21 33.6 nc q gs gate-source charge v ds =160v - 2 - nc q gd gate-drain ("miller") charge...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	83.45K / 4 Page	View it Online	Download Datasheet

For -160v Found Datasheets File :: 2246 Search Time::1.188ms
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