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  tfr Datasheet PDF File

For tfr Found Datasheets File :: 1307    Search Time::1.938ms    
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    BYT12P BYT12P1000 BYT12P1000A BYT12P_1000A BYT12P1 BYT12P600A BYT12P800A BYT12P/1000A

STMicroelectronics N.V.
Vishay Intertechnology,Inc.
Vishay Siliconix
Vishay Telefunken
Part No. BYT12P BYT12P1000 BYT12P1000A BYT12P_1000A BYT12P1 BYT12P600A BYT12P800A BYT12P/1000A
OCR Text ...R=0.25A Type Symbol VF VF IR IR tfr VFP IRM tIRM trr Min Typ Max 1.9 1.8 50 2.5 4.5 7.8 200 220 Unit V V mA mA ns V A ns ns 350 trr 65 ns Characteristics (Tj = 25_C unless otherwise specified) 1000 I FAV- Average Forward...
Description Shielded Multiconductor Cable; Number of Conductors:5; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Temperature Max:80 C; Voltage Nom.:300V RoHS Compliant: Yes
From old datasheet system
Fast Recovery Silicon Power Rectifier

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    BYW81P BYW81P200 BYW81P-200 BYW81PI BYW81PI200 BYW81PI-200 BYW81

http://
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
ST Microelectronics
Part No. BYW81P BYW81P200 BYW81P-200 BYW81PI BYW81PI200 BYW81PI-200 BYW81
OCR Text ...= 0.5A IR = 1A IF = 1A VR = 30V tfr Tj = 25C IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A Min. Typ. Max. 25 Unit ns dIF/dt = -50A/s 40 tr = 10 ns 15 ns VFP Tj = 25C tr = 10 ns 2 V 2/6 BYW81P-200 / BYW81PI-2...
Description    HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
Coaxial Cable; Coaxial RG/U Type:59; Impedance:75ohm; Conductor Size AWG:20; No. Strands x Strand Size:Solid; Jacket Material:FEP; Capacitance:16.1pF/ft; Conductor Material:Copper; Leaded Process Compatible:Yes RoHS Compliant: Yes
; Number of Conductors:2; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Material:FEP; Capacitance:55pF/ft; Conductor Material:Copper; Outer Diameter:0.131" RoHS Compliant: Yes 高效快速恢复整流二极管

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    IXGH32N60CD1 IXGT32N60CD1

IXYS Corporation
Part No. IXGH32N60CD1 IXGT32N60CD1
OCR Text ...300V TVJ= 100C IF = 30A V FR tfr 1.5 Kf 1.0 trr 80 tfr 0.75 I RM 70 0.5 IF= 60A IF= 30A IF= 15A 10 0.50 5 0.25 Qr 0.0 0 40 80 120 C 160 TVJ 60 0 200 400 600 -diF/dt 800 A/ms 1000 0 0 200 400 0.0...
Description HiPerFAST IGBT with Diode

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    L6235 L6235D L6235N L6235PD

STMICROELECTRONICS[STMicroelectronics]
Part No. L6235 L6235D L6235N L6235PD
OCR Text ...GND Source Drain Diodes VSD trr tfr Forward ON Voltage Reverse Recovery Time Forward Recovery Time ISD = 2.8A, EN = LOW If = 2.8A 1.15 300 200 1.3 V ns ns -0.15 (6) 0.34 0.53 0.28 0.47 0.4 0.59 0.34 0.53 2 Logic Input (H1, H2, H3,...
Description DMOS DRIVER FOR THREE-PHASE BRUSHLESS DC MOTOR

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    STPR620CFP STPR620C STPR620CT STPR620CF

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STPR620CFP STPR620C STPR620CT STPR620CF
OCR Text ...VERY CHARACTERISTICS Symbol trr tfr VFP Tj = 25C Tj = 25C Tj = 25C Test Conditions IF = 0.5A IR = 1A IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A tr = 10 ns tr = 10 ns 20 3 Min. Typ. Max. 30 Unit ns ns V To evaluate the conduction losses u...
Description ULTRA FAST RECOVERY RECTIFIER DIODES
ULTRA FAST RECOVERY RECTIFIER DIODES

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    STMicro
Part No. STPR620CF STPR620CT 3460 -STPR620CT
OCR Text ...VERY CHARACTERISTICS Symbol trr tfr VFP Tj = 25C Tj = 25C Tj = 25C Test Conditions IF = 0.5A IR = 1A IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A tr = 10 ns tr = 10 ns 20 3 Min. Typ. Max. 30 Unit ns ns V To evaluate the conduction losses u...
Description Ultra Fast Recovery Rectifier Diodes(瓒?揩??慨澶??娴?????)
From old datasheet system

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    STTA106RL STTA106 STTA106U

ST Microelectronics
STMicroelectronics
Part No. STTA106RL STTA106 STTA106U
OCR Text ...tor TURN-ON SWITCHING Symbol tfr VFp Parameter Forward recovery time Peak forward voltage Test conditions Tj = 25C IF = 1 A, dIF/dt = 8 A/s measured at 1.1 x VF max Min Typ Max 500 10 Unit ns V 2/8 STTA106/U Fig. 2: Forward voltag...
Description TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE

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    STMicro
Part No. STTA106U STTA106 3750
OCR Text ...tor TURN-ON SWITCHING Symbol tfr VFp Parameter Forward recovery time Peak forward voltage Test conditions Tj = 25C IF = 1 A, dIF/dt = 8 A/s measured at 1.1 x VF max Min Typ Max 500 10 Unit ns V 2/8 STTA106/U Fig. 2: Forward voltag...
Description TURBOSWITCH ? ULTRA-FAST HIGH VOLTAGE DIODE
From old datasheet system

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    TRA2525 MR3025 TRA2525-D

ONSEMI[ON Semiconductor]
Part No. TRA2525 MR3025 TRA2525-D
OCR Text ...igure 7. Typical Capacitance tfr , FORWARD RECOVERY TIME (ms) VF TJ = 25C TRR , REVERSE RECOVERY TIME (ms) 1 100 IF 0 IR IF = 1 A 10 IF = 10 A TRR TJ = 25C 0.25 IR tfr VFR VFR = 1.0 V VFR = 2.0 V 0.1 1 IF, FORW...
Description Medium - Current Silicon Rectifier
Medium-Current Silicon Rectifiers

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    APT30GT60BRD

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT30GT60BRD
OCR Text ...COVERY VOLTAGE (VOLTS) EL tfr, FORWARD RECOVERY TIME (nano-SECONDS) trr, REVERSE RECOVERY TIME (nano-SECONDS) A 0.8 160 60A 120 30A 1000 800 12.5 10.0 7.5 5.0 2.5 PR Vfr 15A 600 400 200 80 40 tfr...
Description The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
Thunderbolt IGBT & FRED 600V 55A
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.

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