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For pep Found Datasheets File :: 1537 Search Time::1.047ms
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				ERICSSON[Ericsson]
Part No.	PTB20237
OCR Text	... it may be used for both CW and pep applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 470-860 MHz, 28 Volts Class AB Charact...
Description	150 Watts 470-860 MHz UHF TV Power Transistor 150 Watts, 470-860 MHz UHF TV Power Transistor
File Size	540.61K / 4 Page	View it Online	Download Datasheet

				Microsemi
Part No.	VRF141 VRF141MP
OCR Text	...8v, i dq = 4.0a, p out = 50w pep 23 db imd (d3) f 1 = 30mhz, f 2 = 30.001mhz ,v dd = 28v, i dq = 4.0a, p out = 50w pep -50 imd (d9-d13) f 1 = 30mhz, f 2 = 30.001mhz ,v dd = 28v, i dq = 4.0a, p out = 50w pep -75 functional c...
Description	RF ISM VDMOS Power Transistors
File Size	234.74K / 5 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF7S19170HR308
OCR Text	...ndwidth video bandwidth @ 170 w pep p out where im3 = - 30 dbc (tone spacing from 100 khz to vbw) imd3 = imd3 @ vbw frequency - imd3 @ 100 khz <1 dbc (both sidebands) vbw ? 25 ? mhz gain flatness in 60 mhz bandwidth @ p out = 170 ...
Description	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
File Size	405.67K / 13 Page	View it Online	Download Datasheet

				Motorola, Inc.
Part No.	MRF282
OCR Text	... volts output power = 10 watts (pep) power gain = 11 db efficiency = 30% intermodulation distortion = 30 dbc ? specified singletone performance @ 2000 mhz, 26 volts output power = 10 watts (cw) power gain = 11 db efficiency = 40% ? characte...
Description	LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
File Size	145.00K / 11 Page	View it Online	Download Datasheet

				Motorola
Part No.	CA2832C
OCR Text	...ain e 35.5 db typ @ f = 100 mhz pep e 900 mw typ @ 32 db imd noise figure e 5 db typ @ f = 200 mhz ito e 47 dbm @ f = 200 mhz ? all gold metallization for improved reliability ? unconditional stability under all load conditions maximum r...
Description	CA2832C 35.5 dB, 1-200 MHz, 1.6 Watt Wideband Linear Amplifier - Archived
File Size	68.58K / 4 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	PTF180101 PTF180101S
OCR Text	...28 V, IDQ = 180 mA, POUT = 10 W pep, f = 1990 MHz, tone spacing = 1 MHz Characteristic Gain Drain Efficiency Intermodulation Distortion Data Sheet 1 Symbol Gps Min 18 30 -- Typ 19 33 -30 Max -- -- -28 Units dB % dBc ...
Description	LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
File Size	306.52K / 10 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF7S21170HR3 MRF7S21170HR311 MRF7S21170HSR3
OCR Text	...ndwidth video bandwidth @ 170 w pep p out whereim3=--30dbc (tone spacing from 100 khz to vbw) ? imd3 = imd3 @ vbw frequency -- imd3 @ 100 khz <1 dbc (both sidebands) vbw ? 25 ? mhz gain flatness in 60 mhz bandwidth @ p out =50wavg. g f ? 0....
Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
File Size	795.91K / 17 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	PTFA192001F PTFA192001E
OCR Text	..., i dq = 1.6 a, p out = 200 w pep, ? = 1960 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps ? 15.9 ? db drain efficiency h d ? 41 ? % intermodulation distortion imd ? ?30 ? dbc dc characteristics characteristi...
Description	Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
File Size	277.07K / 11 Page	View it Online	Download Datasheet

For pep Found Datasheets File :: 1537 Search Time::1.047ms
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