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  n-channel Datasheet PDF File

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...integral reverse --- --- -260 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -38A, VGS = 0V --- 89 130 ns TJ = 25C, IF = -38A --- 230 ...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Re...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...integral reverse --- --- -260 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -38A, V GS = 0V --- 89 130 ns TJ = 25C, IF = -38A --- 230...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...integral reverse --- --- -110 p-n junction diode. S --- --- -1.3 V TJ = 25C, IS = -16A, VGS = 0V --- 71 110 ns TJ = 25C, IF = -16A --- 170 ...Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Re...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...howing the G integral reverse p-n junction diode. S TJ = 25C, IS = -16A, VGS = 0V TJ = 25C, IF = -16A di/dt = -100A/s Notes: Repeti...Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W....
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ...tor Corporation IRF530A n-channel POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS BV/ TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drai...
Description n-channel POWER MOSFET
Advanced Power MOSFET

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    SPN12T20

SYNC POWER Crop.
Part No. SPN12T20
OCR Text n-channel enhancement mode mosfet description applications the spn12t20 is the n-channe l logic enhancement mode power field effect transistor which is produced using super high cell density dmos trench technology. the spn12t20 has been...
Description n-channel Enhancement Mode MOSFET

File Size 153.89K  /  5 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text n-channel TrenchMOSTM transistor IRF530N FEATURES * 'Trench' technology * Low on-state resistance * Fast switching * Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 17 A g RDS(ON) 110 m s GENERA...
Description n-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
n-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text n-channel MOSFET 1 8 HEXFET (R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fourth Generation HEXFE...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

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