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00221 03600 MA3056W 2SD19 C1001 CJ2310 2SC4308 F06C30
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  modified Datasheet PDF File

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    IRF[International Rectifier]
Part No. IRH9250
OCR Text ...ckage to source bonding pad. modified MOSFET symbol showing the internal inductances. LS Internal Source Inductance -- 8.7 -- nH Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ...
Description TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A)

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    Anadigics Inc
Part No. ACD0900
OCR Text ... High Reliability S3 Package modified 16 Pin SOIC PRODUCT DESCRIPTION The ACD0900 MMIC is a high performance downconverter fabricated entirely in GaAs. It is designed for use as the second conversion stage in double-conversion tuners an...
Description The ACD0900 MMIC is a high performance downconverter fabricated entirely in GaAs.

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    Motorola
Part No. MC9S12UF32
OCR Text ... Version Summary of Changes modified SMRAM mapping to allow 1k byte 16-bit block mappable to Vector Space. Update spec with review feedback. modified Device pinout to separate D+ D- for high speed and low speed operation. Remap Timer pi...
Description System on a Chip Guide

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    IRF[International Rectifier]
Part No. JANTX2N6794
OCR Text ...ee figure 10 Measured from the modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. IGSS IGS...
Description POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=3.0ohm, Id=1.5A)

File Size 189.48K  /  6 Page

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    IRF[International Rectifier]
Part No. JANTXV2N6762 JANTX2N6762
OCR Text ...ee figure 10 Measured from the modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. IGSS IGS...
Description POWER MOSFET N-CHANNEL(BVdss=500V/ Rds(on)=1.5ohm/ Id=4.5A)
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=1.5ohm, Id=4.5A)

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    IRF[International Rectifier]
Part No. JANTXV2N6768 JANTX2N6768
OCR Text ...ee figure 10 Measured from the modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. IGSS IGS...
Description POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.300ohm, Id=14A)

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    IRF[International Rectifier]
Part No. JANTXV2N6770 JANTX2N6770
OCR Text ...ee figure 10 Measured from the modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. IGSS IGS...
Description POWER MOSFET N-CHANNEL(BVdss=500v, Rds(on)=0.40ohm, Id=12A)

File Size 195.54K  /  6 Page

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    IRF[International Rectifier]
Part No. JANTXV2N6786 JANTX2N6786
OCR Text ...ee figure 10 Measured from the modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. IGSS IGS...
Description POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A)

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    IRF[International Rectifier]
Part No. JANTXV2N6788 2N6788 JANTX2N6788
OCR Text ...ee figure 10 Measured from the modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad. IGSS IGS...
Description POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A)

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Price and Availability




 
Price & Availability of modified
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