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For min.collector-base Found Datasheets File :: 52385 Search Time::6.61ms
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				Mitsubishi Electric Semiconductor
Part No.	PM75B6LB060
OCR Text	...dal, Charged part to Base, AC 1 min. Ratings 450 500 -40 ~ +125 2500 Unit V V C Vrms THERMAL RESISTANCES Symbol Rth(j-c)Q Rth(j-c)F Rth(...Collector-Emitter Saturation Voltage FWDi Forward Voltage Condition VD = 15V, IC = 75A VCIN = 0V (Fi...
Description	FLAT-BASE TYPE INSULATED PACKAGE
File Size	171.59K / 10 Page	View it Online	Download Datasheet

				Cystech Electonics Corp.
Part No.	BTP1955L3
OCR Text	... otherwise specified) symbol min. typ. max. unit test conditions bv cbo -180 -210 - v i c =-100 a bv cer -180 -210 - v ...collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe vce=...
Description	PNP Epitaxial Planar High Current (High Performance) Transistor
File Size	219.86K / 6 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	2SD1410
OCR Text	...aining Voltage: VCEO(SUS)= 250V(Min) Collector-Emitter Saturation Voltage:V CE(sat)= 2.0V(Max) @IC= 4A High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V APPLICATIONS Igniter applications High voltage switching applications A...
Description	isc Silicon NPN Darlington Power Transistor
File Size	122.04K / 3 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	TIP102
OCR Text	...igh DC Current Gain: hFE = 1000(Min)@ IC= 3A Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 3A = 2.5V(Max)@ IC= 8A Complement to Type TIP107 APPLICATIONS D...
Description	isc Silicon NPN Darlington Power Transistor
File Size	116.22K / 3 Page	View it Online	Download Datasheet

				Inchange Semiconductor ... Inchange Semiconductor Company Limited
Part No.	TIP107
OCR Text	...igh DC Current Gain: hFE = 1000(Min)@ IC= -3A Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -3A = -2.5V(Max)@ IC= -8A *Complement to Type TIP102 APPLICATI...
Description	isc Silicon PNP Darlington Power Transistor
File Size	116.42K / 3 Page	View it Online	Download Datasheet

				Inchange Semiconductor Company Limited
Part No.	TIP142T
OCR Text	...igh DC Current Gain: hFE = 1000(Min)@ IC= 5A Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) Complement to Type TIP147T APPLICATIONS *Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMU...
Description	isc Silicon NPN Darlington Power Transistor
File Size	82.94K / 2 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	2N343900 2N3439
OCR Text	...200 V V CE = 450 V V CE = 300 V Min. Typ. Max. 20 20 20 50 500 500 20 Unit A A A A A A A V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) V BE(sat) h FE h FE fT Collector-Emitter Saturation Voltage Base-Emitter Saturation Vo...
Description	SILICON NPN TRANSISTORS SILICON NPN TRANSISTORS
File Size	44.75K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	2PD601ARL 2PD601ARL_DG 2PD601ASL 2PD601ASL_DG 2PD601ASL/DG 2PD601ARL/DG
OCR Text	...90 340 460 Conditions open base Min Typ Max 50 100 Unit V mA NXP Semiconductors 2PD601ARL; 2PD601ASL 50 V, 100 mA NPN general-purpose...collector 1 2 2 sym021 Simplified outline 3 Graphic symbol 3 1 3. Ordering information ...
Description	SMALL SIGNAL TRANSISTOR, TO-236AB PLASTIC PACKAGE-3 50 V, 100 mA NPN general-purpose transistors
File Size	46.41K / 9 Page	View it Online	Download Datasheet

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