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For merit Found Datasheets File :: 1287 Search Time::2.906ms
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				ETL[E-Tech Electronics LTD]
Part No.	MMBV409LT1 MV409 MMBV409
OCR Text	...z pF Min Nom 29 Q,Figure of merit C R ,Capacitance Ratio C 3/ C 8 V R =3.0Vdc f=1.0MHz(1) f=50MHz Min 200 Max 32 Min 1.5 Max 1.9 MMBV409LT1,MV409 26 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured...
Description	Silicon Tuning Diode
File Size	99.35K / 2 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MMBV3102LT1 MMBV3102LT1G
OCR Text	...0 Nom 22 Max 25 Q, Figure of merit VR = 3.0 Vdc f = 50 MHz Min 200 CR, Capacitance Ratio C3/C25 f = 1.0 MHz Min 4.5 Typ 4.8 TYPICAL CHARACTERISTICS 40 Q, FIGURE OF merit (x 1000) 36 CT , DIODE CAPACITANCE (pF) 32 28 24 20 16 12 8....
Description	Silicon Tuning Diode
File Size	43.83K / 3 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MMBV109LT1 MMBV109LT1G MMBV109LT3 MMBV109LT3G MV209G MV209
OCR Text	....0 6.5 Min Nom Max Q, Figure of merit VR = 3.0 Vdc f = 50 MHz Min CR, Capacitance Ratio C3/C25 f = 1.0 MHz (Note 1) Min Max 1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc. 40 36 Q, FIGURE OF merit CT , CAP...
Description	Silicon Epicap Diodes
File Size	59.61K / 4 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MMVL2105T1 MMVL2105T1G
OCR Text	... Vdc mAdc ppm/C Q, Figure of merit VR = 4.0 Vdc, f = 50 MHz Typ 400 Min 2.5 TR, Tuning Ratio C2/C30 f = 1.0 MHz Typ 2.9 Max 3.2 PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE 4. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT (...
Description	Silicon Tuning Diode
File Size	45.60K / 4 Page	View it Online	Download Datasheet

				Rectron Semiconductor ONSEMI[ON Semiconductor]
Part No.	MMBV2101L MMBV2101LT1 MMBV2101LT1G MMBV2103LT1 MMBV2105L MMBV2105LT1 MMBV2105LT1G MMBV2107L MMBV2107LT1 MMBV2107LT1G MMBV2108LT1 MMBV2108LT1G MMBV2109L MMBV2109LT1 MMBV2109LT1G MV2109G LV2209 MV2101 MV2101G MV2105 MV2105G MV2109 MV2109RLRAG MV2109RLRPG
OCR Text	...6.3 36.3 36.3 36.3 Q, Figure of merit VR = 4.0 Vdc, f = 50 MHz Typ 450 450 450 450 450 400 400 400 400 400 400 350 350 350 300 300 200 200 200 200 200 200 TR, Tuning Ratio C2/C30 f = 1.0 MHz Min 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2...
Description	Silicon Tuning Diodes
File Size	66.41K / 5 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MMVL2101NBSP MMVL2101T1 MMVL2101 MMVL2101T1-D
OCR Text	...t Vdc Adc ppm/C Q, Figure of merit VR = 4.0 Vdc, f = 50 MHz Typ 450 Min 2.5 TR, Tuning Ratio C2/C30 f = 1.0 MHz Typ 2.7 Max 3.2 PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE (CT = CC + CJ). CT is measured at 1.0 MHz using a c...
Description	Silicon Tuning Diode Silicon Tuning Diode 6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
File Size	42.92K / 4 Page	View it Online	Download Datasheet

				ON Semi
Part No.	MMVL2101T1_D ON2291
OCR Text	....1 Nom 6.8 Max 7.5 Q, Figure of merit VR = 4.0 Vdc, f = 50 MHz Typ 450 Min 2.5 TR, Tuning Ratio C2/C30 f = 1.0 MHz Typ 2.7 Max 3.2 PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE (CT = CC + CJ). CT is measured at 1.0 MHz using a capacit...
Description	30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE From old datasheet system
File Size	84.12K / 4 Page	View it Online	Download Datasheet

				ON Semi
Part No.	MMVL2101T1 ON2292
OCR Text	...t Vdc Adc ppm/C Q, Figure of merit VR = 4.0 Vdc, f = 50 MHz Typ 450 Min 2.5 TR, Tuning Ratio C2/C30 f = 1.0 MHz Typ 2.7 Max 3.2 PARAMETER TEST METHODS 1. CT, DIODE CAPACITANCE (CT = CC + CJ). CT is measured at 1.0 MHz using a c...
Description	30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODE From old datasheet system
File Size	70.67K / 4 Page	View it Online	Download Datasheet

For merit Found Datasheets File :: 1287 Search Time::2.906ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |