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  light.emitting Datasheet PDF File

For light.emitting Found Datasheets File :: 8340    Search Time::1.079ms    
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    ML725J16F ML7XX1602 ML725B16F ML720J16S

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MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. ML725J16F ML7XX1602 ML725B16F ML720J16S
OCR Text ...r 2.5Gbps transmission emitting light beam at 1310nm. /4 shifted grating structure is employed to obtain excellent SMSR performance under 2.5Gbps modulation. Furthermore, ML7xx16 can operate in the wide temperature range form -20C to 85C wi...
Description MITSUBISHI LASER DIODES 2.5Gbps InGaAsP DFB LASER DIODE

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    ML725B19F ML725C19F ML7XX19 ML728C19S ML720J19S ML720K19S

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MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. ML725B19F ML725C19F ML7XX19 ML728C19S ML720J19S ML720K19S
OCR Text ... 1310nm and standard continuous light output of 5mW. ML7XX19 are hermetically sealed devices having the photo diode for optical output monit...Emitting Facet Case 2.10.15 Reference Plane (1) (2) PD 0.1 1.2 18 1 (...
Description MITSUBISHI LASER DIODES 1310nm InGaAsP FP LASER DIODES

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    ML725AA11F ML725B11F ML725J11F ML720L11S ML720AA11S ML720J11S

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
Part No. ML725AA11F ML725B11F ML725J11F ML720L11S ML720AA11S ML720J11S
OCR Text ...Feedback) laser diodes emitting light beam around 1310nm. They are well suited for light source in long distance digital transmission system. They are hermetically sealed devices with the photo diode for optical output monitoring. ABSOLU...
Description 1310 nm, LASER DIODE
MITSUBISHI LASER DIODES InGaAsP DFB LASER DIODES 三菱激光二极管InGaAsP的DFB激光器

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    PANASONIC[Panasonic Semiconductor]
Part No. CNA1014H
OCR Text ...a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects p...
Description Photo Interrupter

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    Matsshita / Panasonic
Part No. LN58
OCR Text Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems 4.50.3 1.2 2.90.25 High-power output, high-efficiency : PO = 3.5 mW (typ.) Emitted light spectrum suited for silicon photodet...
Description Infrared Light Emitting Diodes

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    Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. CNB1009
OCR Text ...ecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor is used as the light detecting element. The two elements ar...
Description Reflective Photosensor

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    L483SRSGW L483YDT L483EDT L483GDT L483HDT L483IDT

Kingbright, Corp.
ETC
KINGBRIGHT[Kingbright Corporation]
Kingbright Electronic
Part No. L483SRSGW L483YDT L483EDT L483GDT L483HDT L483IDT
OCR Text ...made with Gallium Phosphide Red Light Emitting Diode. The Green and Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode. The High Efficiency Red and Orange source color devices are made with Ga...
Description CYLINDRICAL LED LAMPS T-1 3/4 DUAL COLOR LED, SUPER BRIGHT RED/SUPER BRIGHT GREEN, 5 mm

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    L3WSRSGWCC L3WSRSGW L3WEGW L3WSURKMGKW

KINGBRIGHT[Kingbright Corporation]
Part No. L3WSRSGWCC L3WSRSGW L3WEGW L3WSURKMGKW
OCR Text ... !UNIFORM !LOW Description LIGHT OUTPUT. The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode. The Green and Super Bright Green source color devices are ...
Description T-1(3mm) BI-COLOR INDICATOR LAMPS

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For light.emitting Found Datasheets File :: 8340    Search Time::1.079ms    
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