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PANASONIC[Panasonic Semiconductor]
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Part No. |
CNA1014H
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OCR Text |
...a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects p... |
Description |
Photo Interrupter
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File Size |
90.33K /
3 Page |
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it Online |
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Matsshita / Panasonic
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Part No. |
LN58
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OCR Text |
Light Emitting Diodes
LN58
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems
4.50.3 1.2
2.90.25
High-power output, high-efficiency : PO = 3.5 mW (typ.) Emitted light spectrum suited for silicon photodet... |
Description |
Infrared Light Emitting Diodes
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File Size |
58.91K /
4 Page |
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it Online |
Download Datasheet
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Panasonic Corporation PANASONIC[Panasonic Semiconductor]
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Part No. |
CNB1009
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OCR Text |
...ecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor is used as the light detecting element. The two elements ar... |
Description |
Reflective Photosensor
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File Size |
48.20K /
2 Page |
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it Online |
Download Datasheet
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Price and Availability
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