|
|
|
New Jersey Semi-Conductor Products, Inc.
|
Part No. |
PMD18D100
|
OCR Text |
...sat) base ' emitter saturation* hfe dc current gain* forward bias secondary q/h &/u breakdown current c = 30a ib = 120ma lc = 30a vce = 3v ic = 30a ib = 120ma lc = 30a vre = 3v tj = 25c vce = 30v ta = 25c 1 sec non-repetitive pulse 2 2.8 2.... |
Description |
NPN DARLINGTON POWER TRANSISTOR
|
File Size |
72.06K /
2 Page |
View
it Online |
Download Datasheet |
|
|
|
TOSHIBA
|
Part No. |
RN2908AFS
|
OCR Text |
...7afs~rn2909afs 2010-05-14 4 hfe - ic 10 100 1000 -1 -10 -100 collector current ic (ma) dc current gain hfe common emitter vce = -5 v 25 -25 vce (sat) - ic -0.01 -0.1 -1 -1 -10 -100 collector current ic (ma) collector-emitter saturat... |
Description |
Bias resistor built-in transistor (BRT), 2-in-1
|
File Size |
178.82K /
6 Page |
View
it Online |
Download Datasheet |
|
|
|
PANASONIC[Panasonic Semiconductor]
|
Part No. |
2SB1050
|
OCR Text |
...5C)
Symbol ICBO IEBO VCEO VEBO hfe*1 VCE(sat) fT Cob Conditions VCB = -10V, IE = 0 VEB = -5V, IC = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -2V, IC = -2A*2 IC = -3A, IB = -0.1A*2 VCB = -6V, IE = 50mA, f = 200MHz VCB = -20V, IE = 0, f = ... |
Description |
Silicon PNP epitaxial planer type(For low-frequency amplification)
|
File Size |
36.25K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|