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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ... energyd Single Pulse Avalanche energy Tested Value Avalanche CurrentA Repetitive Avalanche energy Operating Junction and Storage Temperature Range W W/C V mJ A mJ C h g 730 940 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm f...
Description AUTOMOTIVE MOSFET

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ...R E AS , Single Pulse Avalanche energy (mJ) 640 ID TOP 34A 58A 82A BOTTOM RG 20V tp D .U .T IA S + V - DD 480 A 0 .0 1 320 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 160 0 25 50 75 100...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ...R E AS , Single Pulse Avalanche energy (mJ) 640 ID TOP 34A 58A 82A BOTTOM RG 20V tp D .U .T IA S + V - DD 480 A 0 .0 1 320 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 160 0 25 50 75 100...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ... Voltage Single Pulse Avalanche energy Avalanche Current Repetitive Avalanche energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -74 -52 -260 3.8 200 1.3 20 930...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ... Voltage Single Pulse Avalanche energy Avalanche Current Repetitive Avalanche energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Max....
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ... Voltage Single Pulse Avalanche energy Avalanche Current Repetitive Avalanche energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. -31 -22 -110 3.8 110 0.71 20 28...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ... Voltage Single Pulse Avalanche energy Avalanche Current Repetitive Avalanche energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

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    RJK0355DSP-00-J0 RJK0355DSP

Renesas Electronics Corporation
Part No. RJK0355DSP-00-J0 RJK0355DSP
OCR Text ...ent Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR Note1 Ratings 30 20 12 96 12 9 8.1 1.8 69.4 150 -55 to +150 Uni...
Description Silicon N Channel Power MOS FET Power Switching

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    FDA20N50F

Fairchild Semiconductor
Part No. FDA20N50F
OCR Text ...performance, and withstand high energy pulse in the avalanche and commutation mode. These device are well suited for high efficient switched mode power supplies and active power factor correction. D G GDS TO-3PN S MOSFET Maximu...
Description N-Channel MOSFET 500V, 22A, 0.26Ω
N-Channel MOSFET 500V, 22A, 0.26ヘ

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    RJK0351DSP-00-J0 RJK0351DSP

Renesas Electronics Corporation
Part No. RJK0351DSP-00-J0 RJK0351DSP
OCR Text ...ent Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR Note1 Ratings 30 20 20 160 20 17 28.9 2.5 50 150 -55 to +150 Un...
Description Silicon N Channel Power MOS FET Power Switching

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