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For discrete Found Datasheets File :: 18460    Search Time::1.093ms    
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    BFY181 BFY181ES BFY181H BFY181P BFY181S

Infineon Technologies AG
Part No. BFY181 BFY181ES BFY181H BFY181P BFY181S
OCR Text discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.2 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 561...
Description HiRel NPN Silicon RF Transistor

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    BFY182

Siemens Semiconductor Group
Part No. BFY182
OCR Text discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers at collector currents from 1 mA to 20 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.4 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/...
Description From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel discrete and Microwave Semiconductor)

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    V2F118X500Y3D V2F118C400Y1FRP V2F114C300Y1F V2F114A300Y2E V2F105A150Y2E V2F118A400Y2E V2F105A150Y2ERP V2F105C150Y1F V2F1

AVX Corporation
Part No. V2F118X500Y3D V2F118C400Y1FRP V2F114C300Y1F V2F114A300Y2E V2F105A150Y2E V2F118A400Y2E V2F105A150Y2ERP V2F105C150Y1F V2F109A200Y2E V2F109C200Y1F V3F418A400Y3G V3F418X500Y3G
OCR Text ...ponent temperature ( c) 1 74 discrete mlv model where: r v = voltage variable resistance (per vi curve) r p 10 12 c = defined by voltage rating and energy level r on = turn on resistance l p = parallel body inductance discrete mlvf mode...
Description TransFeed AVX Multilayer Cermic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip
AVX Multilayer Ceramic Transient Voltage Suppressors TVS Protection and EMI Attenuation in a Single Chip

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    BFY183

Siemens Semiconductor Group
Part No. BFY183
OCR Text discrete and Microwave Semiconductor For low noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA Hermetically sealed microwave package fT = 8 GHz, F = 2.3 dB at 2 GHz qualified ESA/SCC Detail Spec. No.: 5611/...
Description From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel discrete and Microwave Semiconductor)

File Size 96.32K  /  5 Page

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    BFY193 BFY193ES BFY193H BFY193P BFY193S

INFINEON[Infineon Technologies AG]
Part No. BFY193 BFY193ES BFY193H BFY193P BFY193S
OCR Text discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package fT= 8 GHz F = 2.3 dB at 2 GHz Space Qualified ESA/SCC Detail Spec. No.: 5611/006 Type...
Description HiRel NPN Silicon RF Transistor

File Size 381.48K  /  5 Page

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    BFY405 BFY405ES BFY405H BFY405P BFY405S

Infineon Technologies A...
Infineon Technologies AG
Part No. BFY405 BFY405ES BFY405H BFY405P BFY405S
OCR Text discrete and Microwave Semiconductor For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 23dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEG...
Description    HiRel NPN Silicon RF Transistor

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Price and Availability




 
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