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For di dt Found Datasheets File :: 40682 Search Time::1.141ms
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				IRF[International Rectifier]
Part No.	IRF9520N
OCR Text	... 25C, IF = -4.0A --- 420 630 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -4.0A, di/dt ...
Description	Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
File Size	91.94K / 8 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF9530-220M
OCR Text	....3A VGS = 0 IS = -9.3A TJ = 25C di / dt 100A/ms VDD 50V (from 6mm down drain lead pad to centre of die) A V ns TJ = 25C -4.7 250 3 8.7 8.7 mC nH (from 6mm down source lead to centre of source bond pad) Semelab plc. ...
Description	P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	18.21K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text	... 25C, IF = -8.4A --- 650 970 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycl...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	169.24K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530N
OCR Text	...25C, I F = -8.4A --- 650 970 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -8.4A, di/dt -490A/s, ...
Description	Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	109.25K / 8 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	IRF9530S IRF9530SMD
OCR Text	...S = 8A VGS = 0 IS = 8A TJ = 25C di / dt 100A/ms VDD 50V (from 6mm down drain lead pad to centre of die) A V ns TJ = 25C 4.7 300 3 8.7 8.7 mC nH (from 6mm down source lead to centre of source bond pad) Semelab plc. T...
Description	P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
File Size	22.38K / 2 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text	... 25C, IF = -11A --- 830 1200 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s;...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A) Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
File Size	183.18K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9540N IRF9540 IRF9540NPBF
OCR Text	... 25C, IF = -11A --- 830 1200 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -11A, di/dt ...
Description	-100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
File Size	121.23K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9952
OCR Text	... -- 27 54 T J = 25C, IF =1.25A, di/dt = 100A/s -- 28 57 P-Channel nC -- 31 62 T J = 25C, IF = -1.25A, di/dt = 100A/s Repetitive rating; pulse width limited by Notes: Pulse width 300s; duty cycle 2%. max. junction temperature. ...
Description	Power MOSFET(Vdss= -30V)
File Size	128.20K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9953
OCR Text	...VGS = 0V TJ = 25C, IF = -1.25A di/dt = -100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -1.3A, di/dt -92A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = 67mH RG...
Description	Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)
File Size	98.36K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9956
OCR Text	...VGS = 0V TJ = 25C, I F = 1.25A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 2.0A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = ...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)
File Size	98.88K / 7 Page	View it Online	Download Datasheet

For di dt Found Datasheets File :: 40682 Search Time::1.141ms
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