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Toshiba Corporation
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| Part No. |
TC58V64BDC
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| OCR Text |
...c we wp ce re 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 toshiba is continually working to improve the q...528 bytes in which 512 bytes are used for main memory storage and 16 bytes are for redundancy or f... |
| Description |
64-MBIT (8M 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
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| File Size |
347.93K /
33 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K9F1208U0M-YIB0 K9F1208U0M-YCB0 DSK9F1208U0M
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| OCR Text |
...sue 1. renamed gnd input (pin # 6) on behalf of se (pin # 6) - the se input controls the access of the spare area. when se is high...528 byte data set at the source planes, the above data are moved to internal page registers a... |
| Description |
64M x 8 Bit NAND Flash Memory
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| File Size |
1,148.09K /
41 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K9F2808U0M-YIB0 K9F2808U0M-YCB0
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| OCR Text |
...dard type 12mm x 20mm 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 3...528 bytes 1 block = 528 b x 32 pages = (16k + 512) bytes 1 device = 528b x 32pages x 10... |
| Description |
16M x 8 Bit NAND Flash Memory 1,600 × 8位NAND闪存
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| File Size |
349.99K /
26 Page |
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it Online |
Download Datasheet |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K9F5608U0M-YCB0 K9F5608U0M-YIB0
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| OCR Text |
...n no. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 remark advanced information advanced information preliminary preliminary preliminary preliminary fin...528- byte page in typically 200 m s and an erase operation can be per- formed in typically 2ms on a ... |
| Description |
32M x 8 Bit NAND Flash Memory
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| File Size |
355.87K /
26 Page |
View
it Online |
Download Datasheet |
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