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Icemos Technology
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Part No. |
ICE7N60
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OCR Text |
...max v ( br)dss i d =250ua 600v min r ds(on) v gs =10v 0.52 typ q g v ds =480v 21nc typ icemos and its sister...1 sp - 7n60 - 000 - 3 05/15/2013 d s g t0220 standard metal heatsink 1=gate, 2=dr... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
555.03K /
9 Page |
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it Online |
Download Datasheet
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Icemos Technology
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Part No. |
ICE7N60FP
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OCR Text |
...max v ( br)dss i d =250ua 600v min r ds(on) v gs =10v 0.52 typ q g v ds =480v 21nc typ icemos and its sister...1 sp - 7n60fp - 000 - 2 05/15/2013 d s g t0220 full - pak isolated (t0 - 220) halog... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
516.80K /
9 Page |
View
it Online |
Download Datasheet
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
QM75E3Y-2H QM75E2Y-2H QM75E2Y
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OCR Text |
...-- -- -- -- -- -- 75/100 -- VCC=600V, IC=75A, IB1=-IB2=1.5A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 100 2.5 3.5 1.8 -- 2.5 15 3.0 0.25 1.2 0.13 Unit mA mA ... |
Description |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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File Size |
102.45K /
6 Page |
View
it Online |
Download Datasheet
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Price and Availability
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