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  5.56 Datasheet PDF File

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    Micronas Semiconductor
Part No. SDA5555
OCR Text ...ta sheet 2 sept. 10, 2004; 6251-556-3ds micronas contents page section title 8 1. introduction 8 1.1. general features 8 1.1.1. external crystal and programmable clock speed 8 1.1.2. microcontroller features 9 1.1.3. memory 9 1.1.4. display...
Description (SDA55xx) TV Text Pro

File Size 3,111.14K  /  176 Page

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    BSS64LT1/D

ON Semiconductor
Part No. BSS64LT1/D
OCR Text ...ance junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance junction to ambient r ja 417 c/w junction and storage temperature t j , t ...
Description Driver Transistor NPN Silicon(80V硅NPN驱动器晶体管)

File Size 35.57K  /  4 Page

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    BSS138LT1/D BSS138LT1-D

ON Semiconductor
Part No. BSS138LT1/D BSS138LT1-D
OCR Text ...tance junctiontoambient r q ja 556 c/w maximum lead temperature for soldering purposes, for 10 seconds t l 260 c 3 1 2 device package shipping ordering information bss138lt1 sot23 3000 tape & reel nchannel sot23 case 318 style 21 http://...
Description Power MOSFET 200 mAmps, 50 Volts N-Channel SOT-23
Transient Voltage Suppressor Diodes

File Size 82.97K  /  8 Page

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    BAV99LT1-D

ON Semiconductor
Part No. BAV99LT1-D
OCR Text ...nce, junction to ambient r ja 556 c/w total device dissipation alumina substrate (note 2.) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature ran...
Description Dual Series Switching Diode

File Size 50.79K  /  4 Page

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    BAV74LT1-D

ON Semiconductor
Part No. BAV74LT1-D
OCR Text ...nce, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t...
Description Monolithic Dual Switching Diode

File Size 43.71K  /  4 Page

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    BAS21SLT1-D

ON Semiconductor
Part No. BAS21SLT1-D
OCR Text ...nce, junction to ambient r ja 556 c/w total device dissipation alumina substrate, (note 2.) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature ra...
Description Dual Series High Voltage Switching Diode

File Size 46.29K  /  4 Page

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    AMS1009 AMS1009A AMS1009AN AMS1009AS AMS1009B AMS1009BN AMS1009BS

Advanced Monolithic Systems, Inc.
ADMOS[Advanced Monolithic Systems]
Part No. AMS1009 AMS1009A AMS1009AN AMS1009AS AMS1009B AMS1009BN AMS1009BS
OCR Text ...e, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140 AMS1009 ABSOLUTE MAXIMUM RATINGS (Note 1) Reverse Current 20mA Forward Current 10mA Operating Temperature Range 0C to 70C Storage temperature -55C to +150C Soldering informati...
Description JT 66C 66#22D PIN RECP
VOLTAGE REFERENCE DIODE

File Size 34.45K  /  4 Page

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