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For 5.5 Found Datasheets File :: 279206 Search Time::1.953ms
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				Philips
Part No.	BUK9508-55
OCR Text	...tching applications. BUK9508-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 75 1...
Description	TrenchMOS TM transistor Logic level FET
File Size	48.14K / 8 Page	View it Online	Download Datasheet

				Philips
Part No.	BUK9624-55
OCR Text	...tching applications. BUK9624-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 45 1...
Description	TrenchMOS TM transistor
File Size	50.78K / 8 Page	View it Online	Download Datasheet

				Philips
Part No.	BUK98150-55
OCR Text	...ching applications. BUK98150-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 5.5 1.8 1...
Description	TrenchMOS TM transistor
File Size	50.22K / 9 Page	View it Online	Download Datasheet

				Philips
Part No.	BUK7528-55
OCR Text	...tching applications. BUK7528-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 55 40 ...
Description	TrenchMOS TM transistor Standard level FET
File Size	48.42K / 8 Page	View it Online	Download Datasheet

				Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
Part No.	HY5V22F-55 HY57V283220T-6 HY57V283220T-55 HY57V283220T-H HY57V283220LT-55 HY57V283220LT-H HY57V283220LTP-H HY57V283220LTP-P HY57V283220LT-P HY57V283220LTP-55 HY57V283220TP-55 HY57V283220TP-P HY57V283220TP-7 HY57V283220TP-H HYNIXSEMICONDUCTORINC-HY57V283220LTP-7 HY57V283220LT-S
OCR Text	...V22(L)F(P)-5 HY57V283220(L)T(P)-55 HY5V22(L)F(P)-55 HY57V283220(L)T(P)-6 HY5V22(L)F(P)-6 HY57V283220(L)T(P)-7 HY5V22(L)F(P)-7 HY57V283220(L)T(P)-H HY5V22(L)F(P)-H HY57V283220(L)T(P)-8 HY5V22(L)F(P)-8 HY57V283220(L)T(P)-P HY5V22(L)F(P)-P HY5...
Description	4 Banks x 1M x 32Bit Synchronous DRAM 4M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86 4 Banks x 1M x 32Bit Synchronous DRAM 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86 4 Banks x 1M x 32Bit Synchronous DRAM 4M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86 4 Banks x 1M x 32Bit Synchronous DRAM 4M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
File Size	908.58K / 15 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY628100BLG-55
OCR Text	...t/Icc(mA) HY628100B 4.5~5.5 50/55/70/85 10 HY628100B-E 4.5~5.5 50/55/70/85 10 HY628100B-I 4.5~5.5 50*/55/70/85 10 Comment : 50ns is available with 30pF test load. Standby Current(uA) L LL 100 20 100 30 100 30 Temperature (C) 0~70 -2...
Description	SRAM,128KX8,CMOS,SOP,32PIN,PLASTIC From old datasheet system
File Size	89.36K / 10 Page	View it Online	Download Datasheet

				Philips Semiconductors NXP Semiconductors N.V.
Part No.	BUK9524-55
OCR Text	...tching applications. BUK9524-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 45 1...
Description	TrenchMOS（TM）transistor Logic level FET(TrenchMOS（TM）晶体管逻辑电平FET) TrenchMOSTM）transistor Logic level FET(TrenchMOSTM）晶体管逻辑电平FET)
File Size	64.40K / 8 Page	View it Online	Download Datasheet

				Philips
Part No.	BUK7840-55
OCR Text	55 standard level fet general description quick reference data n-channel enhancement mode logic symbol parameter max. unit level field-effect power transistor in a plastic envelope suitable for surface v ds drain-source voltage 55 v mounti...
Description	TrenchMOS(tm) transistor Standard level FET
File Size	51.36K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BUK9775-55 BUK9775-56
OCR Text	...tching applications. BUK9775-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 11.7...
Description	TrenchMOSTM）transistor Logic level FET(TrenchMOSTM）晶体管逻辑电平FET) TrenchMOS（商标）场效应晶体管逻辑电平TrenchMOS（商标）晶体管逻辑电平场效应管 TrenchMOS transistor Logic level FET 11.7 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	67.63K / 8 Page	View it Online	Download Datasheet

				Winbond Electronics Corp Winbond Electronics, Corp.
Part No.	W986432AH-55 WINBONDELECTRONICSCORP-W986432AH-6
OCR Text	...p to 732m byte s per second ( - 55). for different application, w986432ah is sorted into four speed grades: - 55, - 6, - 7 and - 8. accesses to the sdram are burst oriented. consecutive memory location in one page can be accessed at...
Description	512K x 4 BANKS x 32 BITS SDRAM x32 SDRAM 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
File Size	1,356.42K / 44 Page	View it Online	Download Datasheet

For 5.5 Found Datasheets File :: 279206 Search Time::1.953ms
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