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For 400mil Found Datasheets File :: 2012    Search Time::2.453ms    
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    K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-TC50 K4F661612B-TC K4F661612B K4F661612B-L K4F641612B-TL60 K4F661612B-T

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-TC50 K4F661612B-TC K4F661612B K4F661612B-L K4F641612B-TL60 K4F661612B-TL60 K4F641612B-TL45 K4F661612B-TL45 K4F641612B-TL50 K4F661612B-TL50
OCR Text ...C)* A11 A10 A9 A8 A7 A6 VSS (400mil TSOP(II)) *(N.C) : N.C for 4K Refresh Product Pin Name A0 - A12 A0 - A11 DQ0 - 15 VSS RAS UCAS LCAS W OE VCC N.C Pin function Address Inputs(8K Product) Address Inputs(4K Product) Data In/Out Gro...
Description 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
File Size 842.61K  /  35 Page

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    K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F641612C-TL60 K4F661612C-T

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F641612C-TL60 K4F661612C-TL60 K4F641612C-TL45 K4F661612C-TL45 K4F661612C-TL50
OCR Text ...C)* A11 A10 A9 A8 A7 A6 VSS (400mil TSOP(II)) *(N.C) : N.C for 4K Refresh Product Pin Name A0 - A12 A0 - A11 DQ0 - 15 VSS RAS UCAS LCAS W OE VCC N.C Pin function Address Inputs(8K Product) Address Inputs(4K Product) Data In/Out Gro...
Description 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
File Size 842.92K  /  35 Page

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    K6R1004C1D-JCI10_12 K6R1004C1D-JCI10 K6R1004C1D-JCI12 K6R1004V1D-JCI08 K6R1004V1D-JCI10 K6R1008C1D-JTCI10 K6R1008C1D-JTC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K6R1004C1D-JCI10_12 K6R1004C1D-JCI10 K6R1004C1D-JCI12 K6R1004V1D-JCI08 K6R1004V1D-JCI10 K6R1008C1D-JTCI10 K6R1008C1D-JTCI12 K6R1008V1D K6R1008V1D-JTCI08 K6R1008V1D-JTCI10 K6R1008V1D-J_TC_I10 K6R1004C1D-JC_I10 K6R1004C1D-JC_I12 K6R1004V1D-JC_I08 K6R1004V1D-JC_I10 K6R1008C1D-J_TC_I10 K6R1008C1D-J_TC_I12 K6R1008V1D-J_TC_I08 K6R1016V1D-JTICI08_10 K6R1016C1D-JTCI10_12 K6R1016C1D-JECII10_12 K6R1004V1D-JCI08_10 K6R1008V1D-JTCI08_10 K6R1016V1D-JECI08_10 K6R1008C1D-JTCI10_12
OCR Text ...The K6R1008V1D is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. 128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating) PIN CONFIGURATION(Top View) A0 A1 A2 A3 CS I/O1 I/O2 1 2 3 4 5 6 7 8 9 32 A16 31 A15 30 A14 2...
Description 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
File Size 181.71K  /  10 Page

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    K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C1A-C20 K6R1008C1A-I12 K6R1008C1A-I15 K6R1008C1A-I20 K6R1008C1A-TC20 K6

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C1A-C20 K6R1008C1A-I12 K6R1008C1A-I15 K6R1008C1A-I20 K6R1008C1A-TC20 K6R1008C1A-TI20 K6R1008C1A-JC15 K6R1008C1A-JI15 K6R1008C1A-JI20 K6R1008C1A-TC12 K6R1008C1A-TI12 K6R1008C1A-TI15
OCR Text ...The K6R1008C1A is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. ORDERING INFORMATION K6R1008C1A-C12/C15/C20 K6R1008C1A-I12/I15/I20 Commercial Temp. Industrial Temp. PIN CONFIGURATION(Top View) A0 1 2 3 4 5 6 7 8 9 1...
Description 128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存（5V工作），旋转引脚输出。在商用和工业温度范围操
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
128K x 8 high speed static RAM, 5V operating, 20ns
128K x 8 high speed static RAM, 5V operating, 15ns
File Size 167.22K  /  8 Page

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    K6R1008C1B- K6R1008C1B-C10 K6R1008C1B-C12 K6R1008C1B-C8 K6R1008C1B-I10 K6R1008C1B-I12 K6R1008C1B-I8

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K6R1008C1B- K6R1008C1B-C10 K6R1008C1B-C12 K6R1008C1B-C8 K6R1008C1B-I10 K6R1008C1B-I12 K6R1008C1B-I8
OCR Text ...The K6R1008C1B is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. ORDERING INFORMATION K6R1008C1B-C8/C10/C12 K6R1008C1B-I8/I10/I12 Commercial Temp. Industrial Temp. PIN CONFIGURATION(Top View) A0 1 2 3 4 5 6 7 8 9 ...
Description 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速静电RAM5V工作，旋转频出。在经营商业和工业温度范围
128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速静态RAM5V工作，旋转频出。在经营商业和工业温度范围
128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
File Size 168.46K  /  8 Page

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    K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C1C-C15 K6R1008C1C-I10 K6R1008C1C-I12 K6R1008C1C-I15 K6R1008C1C-J10 K6R

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C1C-C15 K6R1008C1C-I10 K6R1008C1C-I12 K6R1008C1C-I15 K6R1008C1C-J10 K6R1008C1C-J12 K6R1008C1C-J15 K6R1008C1C-T10 K6R1008C1C-T12 K6R1008C1C-T15 K6R1008C1C-P15 K6R1008C1C-L10 K6R1008C1C-L12 K6R1008C1C-L15 K6R1008C1C-P10 K6R1008C1C-P12 K6R1008C1C-JC15 K6R1008C1C-JI12 K6R1008C1C-JI10 K6R1008C1C-JC12
OCR Text ...The K6R1008C1C is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward. ORDERING INFORMATION K6R1008C1C-C10/C12/C15 K6R1008C1C-I10/I12/I15 Commercial Temp. Industrial Temp. PIN CONFIGURATION(Top View) A0 1 2 3 4 5 6 7 8 9 ...
Description 128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
File Size 130.06K  /  9 Page

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    K6R1008C1D K6R1016C1 K6R1016C1D K6R1016V1D K6R1016V1D-TC10 K6R1004C1D-JCI1012 K6R1004V1D-JCI0810 K6R1008C1D-JTCI1012

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
Part No. K6R1008C1D K6R1016C1 K6R1016C1D K6R1016V1D K6R1016V1D-TC10 K6R1004C1D-JCI1012 K6R1004V1D-JCI0810 K6R1008C1D-JTCI1012
OCR Text ...The K6R1016V1D is packaged in a 400mil 44-pin plastic SOJ or TSOP2 forward or 48-TBGA. 64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating) FUNCTIONAL BLOCK DIAGRAM Clk Gen. A0 A1 A2 A3 A4 A5 A6 A7 A8 I/O1~I/O8 I/O9~I/O16 Pre-...
Description 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静态RAM.3V的）在商业和工业温度范围操作
64K X 16 STANDARD SRAM, 10 ns, PDSO44
File Size 258.35K  /  11 Page

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    K9F4008W0A K9F4008W0A- K9F4008W0A-TCB0 K9F4008W0A-TIB0 K9F4G08U0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F4008W0A K9F4008W0A- K9F4008W0A-TCB0 K9F4008W0A-TIB0 K9F4G08U0M
OCR Text ...e - 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch) FLASH MEMORY GENERAL DESCRIPTION The K9F4008W0A is a 512Kx8bit NAND Flash Memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recording. A...
Description 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
512K x 8 bit NAND Flash Memory
File Size 316.09K  /  24 Page

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    K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J
OCR Text ...nout * Available in plastic SOJ 400mil and TSOP(II) packages * Single +5V10% power supply (5V product) * Single +3.3V0.3V power supply (3.3V product) * Refresh Cycles Part NO. K4E171611D K4E171612D K4E151611D K4E151612D VCC 5V 3.3V 5V 3....
Description 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle.
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
File Size 550.56K  /  35 Page

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    K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL
OCR Text ...A11 A10 A9 A8 A7 A6 VSS (J : 400mil SOJ) (T : 400mil TSOP(II)) * (N.C) : N.C for 4K Refresh product Pin Name A0 - A12 A0 - A11 DQ0 - 3 VSS RAS CAS W OE VCC N.C Pin Function Address Inputs(8K Product) Address Inputs(4K Product...
Description 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
File Size 414.70K  /  21 Page

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