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  400-1200 Datasheet PDF File

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    APT150GT120JR

Microsemi Corporation
Microsemi, Corp.
Part No. APT150GT120JR
Description Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP&#174;; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT

File Size 669.00K  /  6 Page

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    VSKT320 VSKD250-04 VSKD250-08 VSKD250-12 VSKD250-16 VSKD250-20 VSKD270-04 VSKD270-08 VSKD320-20 VSKC320-12 VSKC250-16 VS

Vishay Siliconix
VISHAY SEMICONDUCTORS
Part No. VSKT320 VSKD250-04 VSKD250-08 VSKD250-12 VSKD250-16 VSKD250-20 VSKD270-04 VSKD270-08 VSKD320-20 VSKC320-12 VSKC250-16 VSKE320-08 VSKE320-04 VSKE320-16 VSKE250-12 VSKE250-08 VSKE320-12
Description Standard Recovery Diodes, 250 A to 320 A (MAGN-A-PAK Power Modules)
320 A, 1200 V, SILICON, RECTIFIER DIODE
250 A, 1600 V, SILICON, RECTIFIER DIODE
320 A, 800 V, SILICON, RECTIFIER DIODE
320 A, 400 V, SILICON, RECTIFIER DIODE
320 A, 1600 V, SILICON, RECTIFIER DIODE
250 A, 1200 V, SILICON, RECTIFIER DIODE
250 A, 800 V, SILICON, RECTIFIER DIODE

File Size 327.41K  /  13 Page

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    Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Part No. CM75TF-24H
Description Six-IGBT IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT

File Size 57.51K  /  4 Page

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    FF800R12KE3

INFINEON TECHNOLOGIES AG
eupec GmbH
Part No. FF800R12KE3
Description Technische Information / technical information
1200 A, 1200 V, N-CHANNEL IGBT

File Size 142.52K  /  9 Page

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    STTH312B -STTH312B

STMICROELECTRONICS
Part No. STTH312B -STTH312B
Description Ultrafast recovery - 1200 V diode
3 A, 1200 V, SILICON, RECTIFIER DIODE

File Size 89.70K  /  8 Page

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    CD411230 CD411630

Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
Part No. CD411230 CD411630
Description Dual Diode 30 Amperes/1200-1600 Volts
Dual Diode POW-R-BLOK Modules(30 Amperes/1200-1600 Volts) 30 A, 1200 V, SILICON, RECTIFIER DIODE

File Size 71.25K  /  4 Page

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    CM1200HA-24J

Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Part No. CM1200HA-24J
Description Single IGBTMOD?H-Series Module 1200 Amperes/1200 Volts
Single IGBTMOD H-Series Module 1200 Amperes/1200 Volts
Single IGBTMOD⑩ H-Series Module 1200 Amperes/1200 Volts

File Size 74.33K  /  4 Page

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    IXYS, Corp.
IXYS CORP
Part No. C-CWP347-18 T-CWP347-12 T-CWP347-18 W-CWP347-18 C-CWP347-12 W-CWP347-12 T-CWP22-12 W-CWP16-12 T-CWP16-12 C-CWP16-12 T-CWP35-08 C-CWP35-12
Description 392.5 A, 1800 V, SCR
392.5 A, 1200 V, SCR
47.1 A, 1200 V, SCR
37.68 A, 1200 V, SCR
81.64 A, 800 V, SCR
81.64 A, 1200 V, SCR

File Size 208.48K  /  2 Page

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    M57788LR 57788LR

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. M57788LR 57788LR
Description 400-430MHz, 13.5V, 47W, FM MOBILE RADIO 400 - 430MHz3.5V7W配合,调频移动通信
400-430MHz / 13.5V / 47W / FM MOBILE RADIO
From old datasheet system
MITSUBISHI RF POWER MODULE 400-430MHz, 13.5V, 47W, FM MOBILE RADIO

File Size 54.38K  /  3 Page

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    ONSEMI[ON Semiconductor]
Part No. MGY25N120_D ON1934 MGY25N120
Description Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
From old datasheet system

File Size 149.81K  /  5 Page

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