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Freescale Semiconductor
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| Part No. |
MHVIC2115NR2
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| OCR Text |
...formance: - 45 dBc ACPR, 2110 - 2170 MHz, VDD = 27 Volts, IDQ1 = 56 mA, IDQ2 = 61 mA, IDQ3 = 117 mA, Pout = 34 dBm, 3GPP Test Model 1, Measured in 1.0 MHz BW @ 4 MHz offset, 64 DTCH Power Gain -- 30 dB PAE = 16% Driver Application * Typical... |
| Description |
RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
440.22K /
12 Page |
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Motorola Semiconductor Products
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| Part No. |
MRF7S21170H
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| OCR Text |
...s with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. * Typical Single - Carrier W - CDMA Performance: VDD ... |
| Description |
2110?2170 MHz, 50 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs
From old datasheet system
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| File Size |
416.88K /
12 Page |
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it Online |
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Taoglas antenna solutio...
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| Part No. |
MA450KLBICG004
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| OCR Text |
... mimo 698 - 960mhz / 1710 - 2170 mhz / 2490 - 2690mhz / 3300 - 3600mhz 2* wi - fi 2.4ghz /5 .8 ghz 1* gps - glonass - galileo - beidou l1 antenna screw - mount [permanent mount] worldwide 4g bands including 3g an... |
| Description |
Storm MA450 5in1 Permanent Mount Antenna
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| File Size |
5,538.64K /
50 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BLD6G22LS-50112 BLD6G22L-50112
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| OCR Text |
2170 MHz fully integrated Doherty transistor
Rev. 3 -- 17 August 2010 Product data sheet
1. Product profile
1.1 General description
The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP's state of th... |
| Description |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
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| File Size |
155.65K /
15 Page |
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it Online |
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Atmel, Corp.
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| Part No. |
BLF2022-70
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| OCR Text |
...N 2-tone, class-AB f (MHz) f1 = 2170; f2 = 2170.1 VDS (V) 28 CAUTION PL (W) 65 (PEP) Gp (dB) >11
Top view
handbook, halfpage
BLF2022-70
PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
1
2
3
MBK... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | 9A I(D) | SOT-502A 晶体管| MOSFET的| N沟道| 65V的五（巴西）直| 9A条（丁）|的SOT - 502A
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| File Size |
108.01K /
12 Page |
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WJ Communication
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| Part No. |
AH115
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| OCR Text |
...C -40C 2120 2130 2140 2150 2160 2170
12 10 8 6 2110 +25C +85C -40C 2120 2130 2140 2150 2160 2170
-40C
2120
2130
2140
2150
2160
2170
Frequency (MHz)
Frequency (MHz)
3GPP W-CDMA Test Model 1+64 DPCH, 5 MHz offse... |
| Description |
High Linearity InGaP HBT Amplifier
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| File Size |
452.49K /
5 Page |
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it Online |
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MOTOROLA
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| Part No. |
MRF6S21050L
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| OCR Text |
...s with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - carrier... |
| Description |
The MRF6S21050L is designed for W鈥揅DMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA,
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| File Size |
429.79K /
12 Page |
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it Online |
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MOTOROLA
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| Part No. |
MRF6S21060N
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| OCR Text |
...s with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2 - Carrier... |
| Description |
2110鈥?170 MHz, 14 W Avg., 28 V, 2 x W鈥揅DMA Lateral N鈥揅hannel RF Power MOSFETs
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| File Size |
613.88K /
16 Page |
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it Online |
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Price and Availability
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