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HVVi Semiconductors, Inc.
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| Part No. |
HVV1011-035
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| OCR Text |
...lse, 5% Transistor L-Band Radar 1030-1090MHz, Pulsed Power Duty L-Band Avionics L-Band Avionics 50!sPulse, 10% Duty 1200-1400 MHz, 200s Duty 1030-1090MHz, Pulsed Power Transistor HVV1011-035 PRODUCT OVERVIEW Pulse, 5% HVV1011-040 1030-1090M... |
| Description |
L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50楼矛s Pulse, 5% Duty for TCAS and Mode-S Applications
L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50μs Pulse, 5% Duty for TCAS and Mode-S Applications
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| File Size |
630.54K /
2 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
TPR700
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| OCR Text |
1030 - 1090 MHz
GENERAL DESCRIPTION
The TPR 700 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. ... |
| Description |
high power COMMON BASE bipolar transistor.
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| File Size |
264.23K /
3 Page |
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PHILIPS[Philips Semiconductors]
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| Part No. |
BLA1011-300
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| OCR Text |
...pplications at frequencies from 1030 MHz to 1090 MHz.
Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit; tp = 50 s; = 2 %. Mode of operation Pulsed class-AB f (MHz) 1030 to 109... |
| Description |
Avionics LDMOS transistors
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| File Size |
45.37K /
9 Page |
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Mimix Broadband
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| Part No. |
XR1006
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| OCR Text |
...dBm, IF=2.0 GHz, RF=-15.0 dBm, ~1030 Devices
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Conversion Gain (dB)
XR1006 Vd1=3.5 V, Vd2=4.0 V, Id1=130 mA, Id2=116 mA, LSB LO=+2.0 dBm, IF=2.0 GHz, RF=-15.0 dBm, ~1030 Devices
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10 9 8 7 6 5 4 3 2 17.0 18.0 19.0 20.0 21.0... |
| Description |
18.0-25.0 GHz GaAs MMIC Receiver
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| File Size |
349.19K /
7 Page |
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it Online |
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Price and Availability
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