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  0.5-20ghz Datasheet PDF File

For 0.5-20ghz Found Datasheets File :: 257    Search Time::3.547ms    
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    FMA3058-000-WP FMA3058

Filtronic Compound Semicond...
Filtronic Compound Semiconductors
Part No. FMA3058-000-WP FMA3058
OCR Text ... fabricated using the Filtronic 0.25m process. The Circuit is DC blocked at both the RF input and the RF output. TYPICAL APPLICATIONS: *...5 3 6.5 MAX - 3 - - - - - - - - - UNITS dB dB dB dB dBm dBm dBm mA dB dB dB Drain Current...
Description 2-20 GHZ BROADBAND MMIC AMPLIFIER

File Size 163.00K  /  6 Page

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    CHA3063 CHA306308

United Monolithic Semiconductors
Part No. CHA3063 CHA306308
OCR Text ...factured with a pHemt process : 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is su...5.5-23GHz 21dBm output power (Psat) 19dB gain, 1dB gain flatness Typical PAE:11%@P-1dB Chip size : ...
Description 5.5-23GHz Driver Amplifier

File Size 238.99K  /  8 Page

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    CHA3091A

United Monolithic Semiconductors
Part No. CHA3091A
OCR Text ...factured with a MESFET process, 0.7m gate length, via holes through the substrate and air bridges. It is supplied in chip form. Main F...5 10 15 20 25 30 Frequency ( GHz ) Broadband performances: 15dBm minimum input 1dB compressi...
Description DC-40GHz ATTENUATOR

File Size 273.10K  /  8 Page

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    CHA5293A CHA5293A06

United Monolithic Semiconductors
Part No. CHA5293A CHA5293A06
OCR Text ...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...5 0 -5 -10 -15 -20 12 14 16 18 20 Vg3 Vd3 Main Features Wide band : 17-24GHz 31dBm output p...
Description 17-24GHz High Power Amplifier

File Size 225.03K  /  8 Page

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    CHS5100 CHS510005

United Monolithic Semic...
United Monolithic Semiconductors
Part No. CHS5100 CHS510005
OCR Text ... a standard power process using 0.7m implanted active layer MESFET, via holes, air bridges and electron beam gate lithography. This wideband...5:1 Chip size : 1,92 x 1,22 x 0.1mm Main Characteristics Tamb = +25C Symbol Il Is VSWR Parameter...
Description DC-20GHz Reflective SPDT Switch

File Size 107.26K  /  8 Page

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    CHX209104

United Monolithic Semiconductors
Part No. CHX209104
OCR Text ...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. Typical measurement Main Features Output power (dBm) 15 10 5 0 -5 -10 -15 -20 -25 -30 16 17 18 19 20...
Description 20-40GHz Frequency Multiplier

File Size 72.05K  /  5 Page

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    CHA3664-QAG

United Monolithic Semiconductors
Part No. CHA3664-QAG
OCR Text ...ed with a power p-HEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...5-21GHz 20.5 dBm saturated output power 16L-QFN3x3 SMD package 15dB gain DC power consumption: 1...
Description 5-21GHz Driver Amplifier

File Size 313.67K  /  8 Page

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    CHA3667AQDG

United Monolithic Semic...
United Monolithic Semiconductors
Part No. CHA3667AQDG
OCR Text ...tured with a PowerHEMT process, 0.15m gate length, via hole through the substrate. It is ESD protected on RF ports thanks to DC specific fil...5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 22 24 26 S11 S22 S21 Freq ( GHz) Main Char...
Description 7-20GHz Medium Power Amplifier

File Size 515.08K  /  14 Page

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    CHA3667A

United Monolithic Semiconductors
Part No. CHA3667A
OCR Text ...ured with a Power-HEMT process, 0.15m gate length, via hole through the substrate. It is ESD protected on RF ports thanks to DC specific fil...5 3 -10 (1) -10 28 dB dB dB dB dBm 20 21 45 4.2 175 dBm dBm dB V mA These values are repres...
Description 7-20GHz Medium Power Amplifier

File Size 287.52K  /  8 Page

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For 0.5-20ghz Found Datasheets File :: 257    Search Time::3.547ms    
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