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  0.0088 Datasheet PDF File

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    ASI[Advanced Semiconductor]
Part No. 2N5945 ASI2N5945
OCR Text ...RES: * Common Emitter * PG = 9.0 dB at 2.0 W/470 MHz * OmnigoldTM Metalization System B C E B D C J E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG JC 0.8 A 36 V 16 V 4.0 V 15 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 11....
Description NPN SILICON RF POWER TRANSISTOR
From old datasheet system

File Size 13.09K  /  1 Page

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    Microsemi
Part No. 2N6303
OCR Text ...aturation Voltage: VCE(sat) = - 0.75 Vdc @ IC = 1.5 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ) FEATURES: * * * * Silicon PNP Power Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DI...
Description PNP Transistor

File Size 61.44K  /  4 Page

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    ON Semi
Part No. 2N6438 ON0096
OCR Text ...uration Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc * Fast Switching Times @ IC = 10 Adc tr = 0.3 s (Max) ts = 1.0 s (Max) tf = 0.25 s (Max) * Complement to NPN 2N6339 thru 2N6341 2N6437 2N6438* *Motorola Preferred Device 25 AM...
Description 25 AMPERE POWER TRANSISTORS
From old datasheet system

File Size 128.58K  /  6 Page

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    2N6550

InterFET Corporation
Part No. 2N6550
OCR Text 01/99 B-27 2N6550 N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA =25C Reverse Gate Source & Reverse Gate Drain Voltage Continuious Forward Gate Current Continuou...
Description N-Channel Silicon Junction Field-Effect Transistor
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 10MA I(DSS) | TO-46

File Size 92.23K  /  1 Page

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    2N6732

Zetex Semiconductors
Part No. 2N6732
OCR Text ...V(BR)EBO ICBO MIN. -100 -80 -5 -0.1 -10 -0.35 -1.0 100 100 50 TYP. MAX. UNIT V V V A A CONDITIONS. IC=-100A, IE=0 IC=-10mA, IB=0* IE=-1mA, IC=0 VCB=-80V, IE=0 VEB=-5V, IC=0 IC=-350mA, IB=-35mA* IC=-350mA, VCE=-2V* IC=-10mA, VCE=-2V* IC=...
Description PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

File Size 32.71K  /  2 Page

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    2N6804

International Rectifier
Part No. 2N6804
OCR Text ...ber IRF9130 BVDSS -100V RDS(on) 0.30 ID -11A The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design a...
Description -100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package

File Size 155.04K  /  8 Page

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    39-31-0088 5566-08BGS-210 0039310088

Molex Electronics Ltd.
Part No. 39-31-0088 5566-08BGS-210 0039310088
OCR Text ...its, PA Polyamide Nylon 6/6 94V-0, 0.76m (30") Gold (Au) Selective Plating, with Drain Holes Documents: 3D Model Drawing (PDF) RoHS Certificate of Compliance (PDF) Series image - Reference only Agency Certification CSA TUV UL LR19...
Description 4.20mm (.165) Pitch Mini-Fit Jr. Header, Dual Row, Vertical, without Snap-in Plastic Peg PCB Lock
4.20mm (.165) Pitch Mini-Fit Jr.?/a> Header, Dual Row, Vertical, without Snap-in Plastic Peg PCB Lock

File Size 402.30K  /  4 Page

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    Philips
Part No. 2PC4617Q
OCR Text ...ote 1. Pulse test: tp 300 s; 0.02. collector-emitter saturation voltage IC = 50 mA; IB = 5 mA; note 1 collector capacitance transition frequency IE = ie = 0; VCB = 12 V; f = 1 MHz CONDITIONS IE = 0; VCB = 30 V IE = 0; VCB = 30 V; Tj = 15...
Description NPN general purpose transistor

File Size 49.16K  /  9 Page

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    Philips
Part No. 2PD602AR
OCR Text ...ote 1. Pulse test: tp 300 s; 0.02. IC = 500 mA; VCE = 10 V; note 1 IC = 300 mA; IB = 30 mA; note 1 IE = ie = 0; VCB = 10 V; f = 1 MHz IC = 50 mA; VCE = 10 V; f = 100 MHz; note 1 CONDITIONS IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 150 ...
Description NPN general purpose transistor

File Size 49.91K  /  9 Page

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    DONG GUAN SHI HUA YUAN ELECTRON CO.
Part No. 2SA1235A
OCR Text ...CTOR Power dissipation PCM : 0.2 W Tamb=25ae(c) Collector current ICM: -0.2 A Collector-base voltage V (BR) CBO: -60 V Operating and storage junction temperature range T J T stg: -55aeto +150ae ELECTRICAL CHARACTERISTICS Tamb=25ae Param...
Description PNP TRANSISTOR

File Size 132.79K  /  3 Page

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